The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2002

Filed:

Aug. 23, 1997
Applicant:
Inventor:

Leonard L. Boyer, Albuquerque, NM (US);

Assignee:

Radiant Technologies INC, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1311 ;
Abstract

A method for constructing an electrode on a silicon substrate in which the electrode will be subjected to high temperatures during subsequent processing steps. A titanium oxide layer is deposited on the silicon substrate and annealed at a temperature higher than any subsequent temperature to which the titanium oxide layer will be subjected. The electrode is then deposited on the titanium oxide layer. The electrode is preferably platinum or a titanium/platinum composition. The platinum is also annealed to a temperature higher than any subsequent temperature to which the electrode will be subjected. In the preferred embodiment of the present invention, the electrode is constructed in a trench that is etched in a layer of metallic titanium that is deposited over the titanium oxide layer.


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