The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Mar. 22, 2001
Karl Haberger, Planegg, DE;
Andreas Plettner, Feldafing, DE;
Abstract
The present invention relates to a method of producing very thin substrate layers, particularly thin semiconductor areas, which may comprise integrated circuits. In the method two substrates ( ) are bonded by their faces via one or several intermediate connecting layers ( ). At least one of the bonding layers or the face of one of the substrates is structured before in such a way that channel-shaped recesses ( ) are formed which permit a lateral penetration of an etching agent. The resulting wafer stack is thinned from one side down to the desired thickness of the layer. Finally, this thin layer is detached from the remaining substrate by introduction of the etching agent into the channel-shaped recesses. This detaching process is a low-price wet chemical process that does not expose the chip and the added value integrated thereon to any risk.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile