The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
May. 02, 2001
Applicant:
Inventors:
Shian-Jyh Lin, Chiayi Hsien, TW;
Hai-Han Hung, Taoyuan, TW;
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method of treating the surface of a deep trench is disclosed. After forming a deep trench in a silicon substrate, the silicon substrate near the surfaces of the deep trench is treated to become amorphous. An annealing process is executed to make the amorphous silicon layer recrystallize into its original lattice arrangement, so as to reduce lattice defects in the surface of the deep trench.
Lin, Shian-Jyh. (2002). Method for treating the surface of a deep trench (U.S. Patent No. 6417064). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6417064
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile