The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
May. 29, 2001
Feng-Yi Huang, Stormville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate having a mesa surrounded by a trench is formed. Next, a silicon-germanium layer is deposited on the substrate and the portion of the silicon-germanium layer adjacent the mesa is removed to form the silicon-germanium base. In a second embodiment, the process comprises the steps of forming a silicon substrate having a mesa surrounded by a trench, forming a dielectric layer in the trench adjacent the mesa, and growing a silicon-germanium layer on the mesa top surface using selective epitaxial growth to form the silicon-germanium base.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile