The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Feb. 08, 2001
Hyundai Electronics Industries Co., Ltd., Kyungki-do, KR;
Abstract
There is disclosed a method of manufacturing a capacitor in a semiconductor device. In a Ta O capacitor using a Ru lower electrode, the method processes the Ru lower electrode at low temperature before a Ta O film of a dielectric film is deposited, so that Ru crystal particles are filled with oxygen atoms to form a good quality RuO . Therefore, the disclosed method can prevent a lift phenomenon of a thin film by prohibiting a stress of the Ta O dielectric film due to RuO generated between the Ta O dielectric film and the Ru lower electrode during the deposition process of a Ta O dielectric and a subsequent annealing process. Also, the disclosed method can prevent diffusion of oxygen atoms and oxidization of a TiN film underlying the Ru film from the Ta O dielectric film. As a result, the method can improve leakage current and electrical characteristics of a capacitor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile