The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2002
Filed:
Apr. 24, 2001
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
Abstract
A method of manufacturing a semiconductor device which has a crystalline silicon film comprises the steps of forming crystal nuclei in a surface region of an amorphous silicon film and then growing the crystals from the nuclei by a laser light. Typically the crystal nuclei are silicon crystals or metal silicides having an equivalent structure as silicon crystal.