The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Jun. 28, 2000
Soon-Yong Kweon, Ichon-shi, KR;
Hyundai Electronics Industries CI., Ltd., Ichon-shi, KR;
Abstract
A semiconductor device for use in a memory cell includes an active matrix provided with a silicon substrate, a transistor formed on the silicon substrate and isolation regions for isolating the transistor, a capacitor structure formed on top of the active matrix and a metal interconnection for electrically connecting the capacitor structure to the transistor, wherein the capacitor structure includes a bottom and a top electrodes and a capacitor thin film sandwiched therebetween. In the semiconductor device, the bottom electrode is made of a material such as iridium, ruthenium or the like. In order to improve the adhesion between the bottom electrode and insulating layers adjacent thereto, the bottom electrode is encompassed with a metal oxide such as a iridium oxide, ruthenium oxide or the like.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile