The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Nov. 04, 1999
Applicant:
Inventor:
Berinder Brar, Newbury Park, CA (US);
Assignee:
Raytheon Company, Lexington, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1072 ;
U.S. Cl.
CPC ...
H01L 3/1072 ;
Abstract
The field effect device consisting of a substrate, a conducting backplane formed in the substrate, a source and a drain disposed above the conductive backplane, a gate insultatively disposed above the substrate between the source and drain, and a backgate contact electrically coupled to the conducting backplane.
Brar, Berinder. (2002). Field effect transistor and method for making the same (U.S. Patent No. 6414340). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6414340
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