The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2002

Filed:

Mar. 30, 2000
Applicant:
Inventors:

Eisuke Nishitani, Tokyo, JP;

Katsuhisa Kasanami, Tokyo, JP;

Naoko Matsuyama, Tokyo, JP;

Shinya Sasaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
F27D 1/100 ;
U.S. Cl.
CPC ...
F27D 1/100 ;
Abstract

Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps are provided outside the furnace body of a hot-wall CVD apparatus. The hot-wall reactor furnace body is preheated to a prescribed temperature. Wafers W are loaded into the furnace body , and these wafers W are rapidly heated immediately thereafter to the desired temperature by light emitted by the lamps . The lamps are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body . It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body , the wafers W are then loaded into the reactor furnace body , and the wafer temperature is allowed to achieve a uniform state.


Find Patent Forward Citations

Loading…