The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6413864 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 02, 2002

Filed:

Jun. 15, 2001
Applicant:
Inventor:

Sung Gyu Pyo, Kyungki-Do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract

When forming a metal wiring by depositing copper by chemically enhanced chemical vapor deposition (CECVD) method, the present invention forms a diffusion barrier layer, performs chemical treatment using a chemical enhancer, performs a spin rinsing process using a wet cleaning solution and then leaves the chemical enhancer only at the bottom of a damascene pattern. Thus, the present invention allows selective partial fill of copper at the bottom portion of the hole and can prevent generation of voids or seams at the bottom portion of the hole.


Find Patent Forward Citations

Pyo, Sung. (2002). Method of manufacturing a copper metal wiring in a semiconductor device (U.S. Patent No. 6413864). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6413864

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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