The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Jan. 20, 2000
Hideki Hara, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The present invention provides a method of forming a diffusion layer which extends on bottoms and side walls of trench grooves as well as on top portions of ridged portions separating the trench grooves, and the trench grooves being separated by ridged portions of the substrate so that the trench grooves and the ridged portions are aligned between adjacent two of gate electrode structures, the method comprising the steps of: carrying out a first ion-implantation in a vertical direction to introduce an impurity into the bottoms of the trench grooves and into top portions of the ridged portions by use of gate electrode structures; forming side wall insulation films on side wails of the gate electrode structures; and carrying out a second ion-implantation in an oblique direction with a rotation of the substrate by use of the gate electrode structures and the side walls.