The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Oct. 21, 1999
Applicant:
Inventor:
Atsushi Tsuboi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
First, a polysilicon film is formed on a gate oxide film. Next, a polysilicon oxide film is formed on the polysilicon film. Thereafter, the polysilicon film is thermally treated to allow a crystal grain in the polysilicon film to grow from the gate oxide film and the polysilicon oxide film. In a MOS type semiconductor device manufactured in this manner has a gate electrode formed of a plurality of laminated polycrystalline silicon layers each having substantially a single crystal grain in a thickness direction of the gate electrode.