The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Feb. 03, 1997
Sven E. Wahlstrom, Palo Alto, CA (US);
Other;
Abstract
The present invention includes a method of forming a capacitor on a semiconductor support wafer. The method comprises forming a diffusion area in the support wafer to provide a first electrode and a second electrode of the capacitor, implanting a first gas in the diffusion area to form a dielectric layer at a predetermined depth, wherein a first region of the diffusion area is formed below the dielectric layer as the first electrode of the capacitor and a second region of the diffusion area is formed above the dielectric layer as the second electrode of the capacitor, etching a trench in the support wafer to isolate laterally the dielectric layer, growing an epitaxial layer, and implanting a second gas to isolate the epitaxial layer from the second electrode. The capacitor is formed substantially subjacent a semiconductor device formed in the epitaxial layer.