The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Dec. 22, 2000
Jae Kap Kim, Kyoungki-do, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for fabricating a semiconductor memory device. The method includes providing a semiconductor substrate where a transistor has been formed; forming a bit line electrically connected to a second contact plug on a drain region and forming a contact hole exposing a first contact plug on a source region; forming an etch barrier film having a uniform thickness at the inner walls of the contact hole and on the bit line; forming an interlayer insulation film; forming a storage electrode contact by etching the interlayer insulation film and the etch barrier film on the first contact plug; forming a third contact plug electrically connected to the first contact plug in the storage electrode contact; and forming on the third contact plug a capacitor having a stacked structure of a storage electrode, and a dielectric film and a plate electrode surrounding the storage electrode.