The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2002
Filed:
Jun. 02, 2000
Applicant:
Inventor:
Kaoru Mikagi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
Silicide films having a high heat-resistance are formed on a gate electrode, simultaneously with silicide films having good junction leakage characteristics on diffusion layers. A transistor includes a polycrystalline silicon gate electrode, a gate insulating film, a diffusion layer, and sidewalls on a silicon substrate isolated by an element isolation oxide film. A first silicide film and a second silicide film are formed on the gate electrode and on the diffusion layer, respectively. The first silicide film is thicker than the second silicide film.