The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2002

Filed:

Jan. 05, 2000
Applicant:
Inventor:

Naokatsu Ikegami, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 1/500 ;
U.S. Cl.
CPC ...
C03C 1/500 ;
Abstract

When a via hole is formed in an insulating film formed by stacking a TEOS oxide film over an organic SOG film whose surface is modified as a low-K interlayer dielectric, by dry etching, a mixed gas of CHF3, CH2F2 and CO is used as an etching gas and a mixture ratio between CH2F2 and (CHF3+CH2F2) is set to 50% or more, whereby the dry etching for the formation of the via hole is performed.


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