The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6411547 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 25, 2002

Filed:

Feb. 06, 2001
Applicant:
Inventor:

Woong Lim Choi, Chungcheongbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract

Nonvolatile memory device and a method of programming the same, is disclosed, wherein, for single level or multi-level programming of a cell, predetermined voltages are applied to a control gate, source and drain respectively for varying a charge amount in the floating gate. A channel in a transistor is turned off at an initial stage and then turned on thereafter, and at least one of the voltages applied to the control gate and the program/select gate is halted to stop the programming when a conductivity of the channel region reaches a reference value.


Find Patent Forward Citations

Choi, Woong. (2002). Nonvolatile memory cell and method for programming and/or verifying the same (U.S. Patent No. 6411547). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6411547

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…