The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Nov. 28, 2000
Subramani Kengeri, San Jose, CA (US);
Silicon Access Networks, San Jose, CA (US);
Abstract
A load-less 12-T TCAM wherein a TCAM cell uses two 1-bit 4-T SRAM storage cells that are scalable with technology. The TCAM has a TCAM cell that comprises two 1-bit 4-T SRAM data storage cells and a comparator. Within the TCAM cell, each of the two 1-bit 4-T SRAM storage cells is coupled to a BL by a pass-gate PMOS transistor that has a NP drain diode section. This NP drain diode section has a reverse-biased leakage current that is adapted to keep a dynamic node of the SRAM storage cell high without relying on any resistive-load element. The comparator is coupled to these two 1-bit 4-T SRAM storage cells. The comparator is adapted for matching a reference data with data communicated to the comparator from the two SRAM storage cells. The comparator is a 4-T comparator coupled to these two 4-T SRAM storage cells, thereby making the TCAM a 12-T load-less static TCAM.