The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Feb. 20, 2001
Frantisek Mikulenka, Roznov, CZ;
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Abstract
A bias circuit ( , FIG. 2) includes a first bipolar junction transistor (BJT) ( ), which provides, to an external transistor ( ), a biasing voltage ( ) equal to the first BJT's base-emitter junction voltage plus a biasing voltage at the first BJT's base ( ). A current multiplying mirror circuit ( ) senses a fraction of the first BJT's collector current, and produces a current equal to the collector current. This mirror current flows through a second BJT ( ). A voltage at the collector ( ) of the second BJT is divided, producing the biasing voltage at the base ( ) of the first BJT. This biasing voltage has a temperature coefficient with an opposite sign and a same magnitude as a temperature coefficient of the first BJT's base-emitter junction voltage, resulting in a near zero temperature coefficient for the biasing voltage ( ).