The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Nov. 20, 1998
Applicant:
Inventors:
Kenji Kawai, Hyogo, JP;
Kazumasa Yonekura, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/9167 ; H01L 2/1265 ; H01L 2/1425 ; H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/9167 ; H01L 2/1265 ; H01L 2/1425 ; H01L 2/176 ;
Abstract
A relatively thick gate oxide film and a relatively thin gate oxide film are formed on a surface of silicon substrate. In a region exactly under the relatively thick gate oxide film, a halogen is added only within a depth range of no more than 2 nm from the main surface of silicon substrate. Thus, a semiconductor device having a dual gate oxide and a method of manufacturing the same can be obtained capable of reducing damage to the substrate through a simplified process.