The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Sep. 21, 2000
Toshikazu Sei, Kanagawa-ken, JP;
Hiroaki Suzuki, Kanagawa-ken, JP;
Toshiki Morimoto, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The present invention provides a standard cell which can reduce an effective cell size and improve an integration degree of a semiconductor integrated circuit. The standard cell includes a plurality of MOS transistors formed on a semiconductor substrate. Then, a plurality of standard cells are adjacent to each other in upper, lower, left and right directions, and constitute the semiconductor integrated circuit. The present invention is intended to reduce the effective cell size in such a way that a source region of a MOS transistor connected to a power supply voltage or a ground voltage is shared between cells adjacent to each other. Also, even if the source region is not shared, a source region of one cell in the cells adjacent to each other is arranged in an empty space region of the other cell in such a way that it bestrides between the cells adjacent to each other.