The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Mar. 22, 2000
Applicant:
Inventor:
Larry M. Tichauer, La Palma, CA (US);
Assignee:
Ophir RF, Inc., Los Angeles, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1105 ;
U.S. Cl.
CPC ...
H01L 3/1105 ;
Abstract
A semiconductor device that has a p-n junction with a photosensitive region partially having a diffusion region and a non-diffused region when the p-n junction is subjected to a reverse bias voltage. When an incident light (e.g. a laser) is directed at the surface of the photosensitive region, hole-electron pairs are generated in the partial diffusion region within the photosensitive region. As a result, the current through the photosensitive region changes in a substantially linear fashion with the intensity of the incident light. The semiconductor device can be configured in a circuit to provide substantially linear power amplification.