The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Nov. 16, 2001
Applicant:
Inventors:
Yasunori Usui, Yokohama, JP;
Shigeo Kouzuki, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
A semiconductor apparatus has an NPN (or PNP) laterally three-layered pillar formed in a mesh form among a plurality of trench type element isolation regions, and having a source and gate on an upper surface of the three-layered pillar, and a drain on a lower surface thereof. A depth DT and minimum planar width WTmin of the element isolation region and a width WP of the three-layered pillar are configured to satisfy a relation of 3.75≦DT/WP≦60 or 5.5≦DT/WTmin≦14.3. The above configuration realizes a high breakdown voltage and low on-resistance are realized.