The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2002

Filed:

Apr. 10, 2000
Applicant:
Inventors:

Tirdad Sowlati, Ossining, NY (US);

Vickram Vathulya, Ossining, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ;
Abstract

A capacitor structure having a first and at least a second level of electrically conductive concentric lines of an open-loop configuration. The conductive lines of the at least second level overlie the conductive lines of the first level. A dielectric material is disposed between the first and second levels of conductive lines and between the conductive lines in each of the first and second levels. The conductive lines are electrically connected in an alternating manner to terminals of opposing polarity so that capacitance is generated between adjacent lines in each level and in adjacent levels. The capacitor especially useful in deep sub-micron CMOS.


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