The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Mar. 13, 2001
Applicant:
Inventor:
Masaru Wakabayashi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ;
U.S. Cl.
CPC ...
H01L 2/7108 ;
Abstract
A first conductive layer of metal silicide, a silicon layer, an insulating layer, and a second conductive layer of metal or metal silicide are deposited in the order named on a surface of a semiconductor substrate. Thereafter, the second conductive layer and the insulating layer are patterned to expose the silicon layer. The exposed silicon layer and the first conductive layer are patterned, thereby forming an MIM capacitance circuit.
Wakabayashi, Masaru. (2002). Integrated circuit device with mim capacitance circuit (U.S. Patent No. 6410953). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6410953
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile