The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
May. 12, 2000
Shinichi Wada, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device operable with a single positive power source, enabling an increase in efficiency, and improved in high-frequency characteristics by lowering the resistivity of a gate contact, including a carrier run layer formed on a substrate for running of carriers; a carrier supply layer formed on the carrier run layer, having a larger bandgap than the carrier run layer, and containing a first conductivity type impurity; a barrier layer formed on the carrier supply layer and having a smaller bandgap than the carrier supply layer; a source electrode and a drain electrode formed on the barrier layer at a predetermined distance from each other; a gate electrode formed on the barrier layer between the source electrode and the drain electrode away from the source electrode and the drain electrode; and a first low resistivity region formed at least below the gate electrode in the barrier layer and containing a second conductivity type impurity opposite in conductivity to the first conductivity type, and a process of production of the same.