The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
May. 01, 2000
Applicant:
Inventor:
Takayuki Toyama, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1338 ; H01L 2/1203 ;
U.S. Cl.
CPC ...
H01L 2/1338 ; H01L 2/1203 ;
Abstract
In order to reduce a contact resistance of an electrode of a semiconductor device, a metal layer is directly formed on a source area and a drain area so as to form a source electrode and a drain electrode without providing a cap layer thereunder. Consequently, a step for removing the cap layer can be eliminated, simplifying the manufacturing process for the semiconductor device.