The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Mar. 01, 2001
Naho Nishioka, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device having a trench isolation structure includes patterning a mask film on a semiconductor substrate, forming a trench by etching the semiconductor substrate by use of the mask film, filling the trench with an insulating film by repeating depositing the insulating film in the trench and etching the insulating film by sputter etching, removing the mask film, and removing the insulating film by etching a predetermined amount of the insulating film filled in the trench. According to the sputter etching in the step of filling the trench with the insulating film, an edge between a surface of the substrate and an inner wall surface of the trench forms an inclined surface to the surface of the substrate.