The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Nov. 09, 2000
Kee Jeung Lee, Seoul, KR;
Kwang Chul Joo, Kyoungki-do, KR;
Abstract
The present invention discloses a method of manufacturing a Ta O capacitor with high capacitance using a Ta O thin film as a dielectric layer. The method according to the present invention, comprising the steps of: providing a semiconductor substrate over which selected lower patterns are formed and an intermediate insulating layer is covered; forming a lower electrode on the intermediate insulating layer; nitrifying the surface of the lower electrode; depositing a Ta O thin film in an amorphous state on the nitrified surface of the lower electrode; annealing the amorphous Ta O thin film at a low temperature; annealing the low thermal annealed amorphous Ta O thin film at a high temperature so as to form a crystalline Ta O thin film as a dielectric layer; and forming an upper electrode on the dielectric layer made of the crystalline Ta O thin film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile