The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
May. 31, 2001
Kyong Min Kim, Kyoungki-do, KR;
Kyung Cheol Jeong, Chungcheongbuk-do, KR;
Han Sang Song, Seoul, KR;
Dong Jun Kim, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of depositing a cap oxide film on a semiconductor substrate, patterning the cap oxide film to expose a capacitor region of the semiconductor substrate, consecutively depositing an Ru film for a lower electrode on the patterned cap oxide film and the semiconductor substrate in in-situ according to a low pressure chemical vapor deposition(LPCVD) and a plasma enhanced chemical vapor deposition(PECVD), forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and removing the cap oxide film, forming an amorphous TaON film having a high dielectric constant on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile