The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
May. 24, 2001
Sven E. Wahlstrom, Palo Alto, CA (US);
Other;
Abstract
A method of forming a submerged semiconductor structure is provided. According to one embodiment, a recessed area is formed on the surface of a wafer of first conductivity type. A dielectric layer is then formed on the surface of the wafer and recessed area. Polysilicon may then deposited in the recessed area to form a polysilicon region, and a dopant of second conductivity type may be selectively implanted in a first defined region. An epitaxial layer may then be grown over the structure. In one embodiment, the first defined region may pattern the implantation of the dopant to form a submerged transistor. In another embodiment, a second region under the recessed area is also implanted with a dopant of second conductivity type, and the first defined region may control the selective implantation to form a submerged capacitor.