The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Jun. 14, 2001
Andrew J. Flewitt, Cambridge, GB;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
In a method of manufacturing a transistor, a gate conductor is defined over an insulating substrate. A gate insulator layer is formed over the gate conductor. A first microcrystalline silicon layer is deposited over the gate insulator layer and is exposed to nitrogen plasma, thereby forming silicon nitride and substantially maintaining the crystalline structure. Successive layers are similarly deposited and then exposed to nitrogen plasma, forming multiple microcrystalline silicon layers. A further microcrystalline silicon layer is formed over the exposed layers, defining the semiconductor body of the transistor. A source and drain structure are defined over the transistor body.