The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Jul. 14, 2000
Kazuto Noritake, Gifu, JP;
Toshifumi Yamaji, Aichi, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
On an insulating substrate ( ), there are formed a first gate electrode ( ), a gate insulating film ( ), a semiconductor film ( ), and an interlayer insulating film ( ). Above the interlayer insulating film ( ), a TFT is formed having a second gate electrode ( ) connected to the first gate electrode ( ). Then, a photosensitive resin ( ) is formed over the entire surface of the extant layers. Subsequently, first exposure ( ) is applied using a first mask ( ), and second exposure ( ) is then applied using a second mask ( ) with a larger amount of light than used for the first exposure. The second mask ( ) has an opening at a position corresponding to a source ( ). Thereafter, the photosensitive resin film ( ) is developed thereby forming a contact hole ( ) and a recess ( ).