The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Jun. 13, 1997
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A plasma process, which can fabricate a deposition film in short time and at low cost, which can fabricate a deposition film with excellent reproducibility, which can greatly decrease the cleaning time upon cleaning, and which is optimum for fabricating a deposit film, especially a photosensitive member for electrophotography, capable of achieving a high charge potential upon electrification and capable of obtaining clear images with less image defects, is arranged such that a raw-material gas comprising silicon is introduced into a deposition chamber while evacuating the deposition chamber capable of being kept airtight in a vacuum, the raw-material gas is decomposed by high-frequency power in the VHF band, film formation is carried out to form a deposit film on a substrate installed in the deposition chamber, and thereafter cleaning inside the deposition chamber is carried out by etching and removing a deposit film depositing inside the deposition chamber, using a gas containing at least fluorine and using high-frequency power of a frequency lower than the VHF band.