The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Sep. 12, 1995
Tae S. Kim, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method and apparatus are disclosed for achieving a desired thickness profile in a semiconductor device ( ) using a flow-flange reactor ( ), by adjusting input flow ratios in the flow-flange ( ) of the reactor ( ). A target thickness profile is established. A first set of optimum input flow ratios are then determined in response to the target thickness profile, based upon a first plurality of sample thickness profiles and a first plurality of sets of sample input flow ratios, wherein each of the sample thickness profiles corresponds to one of the first plurality of sets of sample input flow ratios. The input flow ratios of the reactor ( ) are then adjusted in response to the first optimum set of input flow ratios.