The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Sep. 24, 1999
Applicant:
Inventor:
Hiroshi Mizutani, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/750 ;
U.S. Cl.
CPC ...
G06F 1/750 ;
Abstract
A method of designing a circuit with a field effect transistor (FET) for operation with a large signal. The method comprises the steps of expressing the FET with a two-terminal nonlinear circuit model having a source and a drain, such that a gate terminal thereof is open in at least a frequency band used thereby, and calculating behaviors of the circuit in operation with a large signal represented by a large amplitude of an input voltage, based on the two-terminal nonlinear circuit model.