The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Jan. 28, 1999
Other;
Abstract
A transistor having a longer channel length and serving as a reference, and a transistor having a shorter channel length and to be subjected to effective channel length extraction are prepared (step ST ). A hypothetical point at which a change in a total drain-to-source resistance is estimated to be approximately zero when a gate overdrive is slightly changed is extracted in a mask channel length versus total drain-to-source resistance plane. The values of a function (F) are calculated which are defined by the difference between the rate of change in the total drain-to-source resistance and the product of a channel resistance per unit length and the rate of change in a mask channel length at the hypothetical points (step ST ). A true threshold voltage of the transistor having the shorter channel length is determined by a shift amount (&dgr;) which minimizes the standard deviation of the function (F) determined in the step ST (step ST ). A resistance-based method thus extracts an effective channel length and a series resistance with increased accuracy.