The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Dec. 15, 2000
Takashi Kumagai, Chino, JP;
Masahiro Takeuchi, Sakata, JP;
Satoru Kodaira, Chino, JP;
Takafumi Noda, Sakata, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The drain of a drive transistor Q and the drain of a load transistor Q are connected by a first drain—drain contact layer. The drain of a drive transistor Q and the drain of a load transistor Q are connected by a second drain—drain contact layer. The gate electrodes of the drive transistor Q and the load transistor Q (a first gate electrode layer) are connected to the second drain—drain contact layer by a first drain-gate contact layer. The gate electrodes of the drive transistor Q and the load transistor Q (a second gate electrode layer) are connected to the first drain—drain contact layer by a second drain-gate contact layer.