The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2002

Filed:

Dec. 29, 1999
Applicant:
Inventors:

Minehiro Nemoto, Hitachi, JP;

Yasuyuki Kojima, Hitachi, JP;

Nobuyasu Kanekawa, Hitachi, JP;

Seigou Yukutake, Hitachinaka, JP;

Katsuhiro Furukawa, Oume, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
Abstract

A small sized semiconductor device having a high insulating performance between a primary side circuit and a secondary side circuit is realized. A circuit region plural first and second terminal electrodes connected to the circuit region and an insulation-separation region for separating electrically the first terminal electrodes from the second terminal electrodes, and for transmitting signals between the first and the second terminal electrodes are formed onto a semiconductor chip and the insulation-separation region is provided between the first and second terminal electrodes. The interval between the first and the second terminal electrodes on the same semiconductor chip can be separated with high insulating performance.


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