The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Feb. 08, 2001
Applicant:
Inventor:
Hirotaka Mori, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7148 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/7148 ; H01L 2/976 ;
Abstract
A semiconductor device having a dual gate wherein impurities implanted into one gate region are prevented from reaching the other gate region and diffusing there. A wide gate separating region is secured between a p gate region and an n gate region. This gate separating region is a non-doped polysilicone region in which impurities such as B, P, and As are not implanted. Therefore, the probability that impurities existing in one gate region may reach the other gate through a gate electrode metal film is extremely low. Consequently, the characteristics of the semiconductor device are maintained in excellent condition.