The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Jul. 03, 2000
Atsunobu Kawamoto, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a polysilicon diode layer formed so that pn junctions are positioned only in a portion (first portion) of the polysilicon diode layer which overlies at least one guard ring having a field alleviating structure for holding the breakdown voltage of an IGBT, thereby to prevent the deterioration of the breakdown voltage of the polysilicon diode resulting from the operation of a MOSFET including the pn junctions of the polysilicon diode layer between the collector and gate of the IGBT, an n drift layer and a field oxide film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile