The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Apr. 14, 1999
Mitsuhiko Ogihara, Tokyo, JP;
Yukio Nakamura, Tokyo, JP;
Hiroshi Hamano, Tokyo, JP;
Masumi Taninaka, Tokyo, JP;
Abstract
A light emitting diode in accordance with the present invention has a p-n junction which is formed by selectively implanting an impurity from the surface of a semiconductor substrate, and also has an etched groove which is formed in the p-n junction area near the surface of the substrate. In the area where the etched groove is formed, the p-type area and the n-type area are spatially separated in the region of the substrate, therefore the movement of minority carriers does not occur. As a consequence, in the light emitting diode in accordance with the present invention, the movement of minority carriers in the p-n junction interface occurs at a deeper position of the semiconductor substrate. In a deep position of the semiconductor substrate, the recombination rate of minority carriers is high. Therefore if the recombination of minority carriers is increased in a deep position, the emission efficiency of the light emitting diode increases.