The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2002

Filed:

Mar. 31, 1999
Applicant:
Inventors:

Rick Zemen, Austin, TX (US);

Tiecheng Zhou, Austin, TX (US);

Assignee:

Photronics, Inc., Brookfield, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ;
Abstract

A method for adjusting out of tolerance critical dimensions of an under processed photomask to be within predetermined defined limits after the photosensistive resist material has been removed from the exposed photomask. The method includes measuring the critical dimensions of the opaque material of the under processed photomask after the photosensitive resist material has been removed, and exposing the photomask to electrified plasma gases for removing excess opaque material without degrading the reflectivity of the photomask beyond specified limits.


Find Patent Forward Citations

Zemen, Rick. (2002). Method of manufacturing photomasks by plasma etching with resist stripped (U.S. Patent No. 6406818). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6406818

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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