The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Jul. 10, 1997
Chwan-Ying Lee, Tainan, TW;
Tzuen-Hsi Huang, Tou Liu, TW;
Industrial Technology Research Institute, Hsin-chu, TW;
Abstract
The present invention provides a method of manufacturing a nickel-silicide technology for polysilicon interconnects. Nickel is deposited on polysilicon using a electroless process. Using a rapid thermal anneal process, Ni is transformed to NiSi at about 600° C. without any agglomeration. The method comprises forming a polysilicon layer over a substrate The surface of the polysilicon layer is activated. Nickel is selectively electroless deposited onto the surface of the polysilicon layer forming a Nickel layer over the polysilicon layer. The Ni layer is rapidly thermally annealed forming a Nickel silicide layer over the polysilicon layer The rapid thermal anneal is performed at a temperature of about 600° C. for a time of about 40 sec. The Nickel silicide layer preferably comprises NiSi B with a low resistivity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile