The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2002
Filed:
Apr. 28, 2000
Showa Denko K.K,, Tokyo, JP;
Abstract
A process for producing a silicon carbide single crystal and a production apparatus therefor which enable, under stable conditions, continuous production of a silicon carbide single crystal which has a reduced density and dispersion of crystal defects in a growth direction, no lattice distortion, a large diameter, and constant quality. A melted or vaporized silicon material is introduced from the outside of a reaction system into a carbon material heated to a temperature equal to or higher than a temperature at which the silicon material vaporizes; and a reaction gas containing silicon gas and silicon carbide gas generated by a reaction between the carbon material and the silicon material is caused to reach a silicon carbide seed crystal substrate 5 which is held at a temperature lower than that of the carbon material, so that a silicon carbide single crystal grows on the silicon carbide seed crystal substrate.