The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Mar. 30, 2001
Toshiaki Kirihata, Poughkeepsie, NY (US);
Sang Hoo Dhong, Austin, TX (US);
Chorng-Lii Hwang, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Hiding a refresh operation in a DRAM or eDRAM is achieved by tailoring an external random access time tRC to slightly extend into the internal random access cycle time. This allows for an additional internal random access cycle time tRC after a plurality of external random access cycles n(tRC ) when enabling the corresponding internal random access operation n(tRC ). The additional core random access cycle time tRC is achieved at every n clock, where n>tRC /(tRC −tRC ), or at a time defined by the product of tRC and tRC /(tRC −tRC ). The additional core cycle time tRC is used for refreshing the DRAM By scheduling a refresh-to-refresh period equal to or greater than the phase recovery time, a fully command compatible static random access time can be realized with DRAM cells.