Magnetic memory device and method of reading data in magnetic memory device

Abstract

There is disclosed a structure of a magnetic memory device for writing/reading data to/from a magnetic memory cell including a plurality of magnetic layers. The magnetic memory device includes a plurality of magnetic memory cells, each magnetic memory cell being formed to have at least three magnetic layers. The plurality of magnetic memory cells are laid out along crossings between a plurality of first lines and a plurality of second lines that cross the first lines, respectively. The magnetic memory device selectively passes a current through the first lines and the second lines, and controls directions of magnetic moments of the first, second and third magnetic layers. Thus, the magnetic memory device writes data into a specific magnetic memory cell. In this structure, each of the first lines comprises at least two word lines. Each word line individually controls a direction of a magnetic moment of any one of the first, second and third magnetic layers, thereby to store data of two or more values in the specific magnetic layer. Preferably, there is provided a method of reading data in the above magnetic memory device.