Read only memory having correction current supplying circuit

Abstract

A read only memory (ROM) capable of eliminating effects of off leak current of non-selected memory cells so as to prevent read errors in a large scale ROM. The ROM comprises word lines WL −n activated in response to an address signal, sense lines CL −m intersected with the word lines WL −n and selected in response to a selection signal SL −m,r, a reference sense line CLr intersected with the word lines WL −n, memory cells storing data therein, reference memory cells connected to the reference sense line CLr, a sense amplifier for comparing currents flowing on the selected one of the sense lines CL −n and on the reference sense line CLr. The ROM further comprises a correction current supply circuit connected to the sense lines CL −n and the reference sense line CLr. The correction current supply circuit generates a correction current approximately corresponding to a leak current flowing through the memory cells connected to the selected one of the sense lines CL −n and provides the correction current to the sense lines CL −n and the reference sense line CLr.