The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Aug. 02, 2000
Chen-Teng Fan, Hsinchu Hsien, TW;
Jyh-Herng Wang, Hsinchu Hsien, TW;
Faraday Technology Corp., Hsinchu, TW;
Abstract
A silicon chip capacitance measurement circuit including three pairs of completely matched MOS transistors divided into two symmetrical circuits. Capacitance of a capacitor within the silicon chip is measured using the difference in average charging current flowing from the measurement circuit via a left and a right capacitor. A power supply provides a constant voltage source to the measurement circuit. A current measuring device measures the current flowing from the power supply to the measurement circuit. A signal generator provides a group of three-phase non-overlapping signals to the measurement circuit. The capacitance measurement circuit is able to limit measurement error due to the return of different size negative currents leading to the transient switching of MOS transistors in the current measurement device so that accuracy of capacitance measurement improves.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile