The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Jan. 20, 2000
Akihiko Okamoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Semiconductor layers are formed on a substrate, and an insulating film is formed on the semiconductor layers. On the insulating film is formed a gate electrode, which has emitter holes formed therein. In the emitter holes are formed emitters, which are provided with emitter electrodes via the semiconductor layers. The emitters are grouped into a plurality of emitter groups each having at least one emitter. The emitters of each of the emitter groups are connected to each of the semiconductor layers. Common electrodes are formed across the semiconductor layers via the insulating film. Thereby, a field emission type cold cathode element is obtained which has nonlinear characteristics of providing a low resistance in normal operation and a high resistance upon discharges.